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Previous Article
Novel CD inspection technology leveraging a form birefringence in a Fourier space
A new technology was developed to detect Critical Dimension (CD) variations in a Fourier space. The detection principle is a form birefringence of the wafer. Utilizing this principle, CD and Pattern E...
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Linewidth roughness and cross-sectional measurements of sub-50 nm structures with CD-SAXS and CD-SEM
Critical dimension small angle X-ray scattering (CD-SAXS) is a measurement platform that is capable of measuring the average cross section and sidewall roughness in patterns ranging from (10 to 500) n...

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Experimental quantification of reticle electrostatic damage below the threshold for ESD

Proc. SPIE, Vol. 6922, 69221Y (2008); doi:10.1117/12.760480

Online Publication Date: 24 March 2008

Conference Date: Monday 25 February 2008
Conference Location: San Jose, CA, USA
Conference Title: Metrology, Inspection, and Process Control for Microlithography XXII
Conference Chairs: John A. Allgair, Christopher J. Raymond
Gavin C. Rider
Microtome Inc.

Thottam S. Kalkur
Univ. of Colorado at Colorado Springs
The damage mechanisms that take place when a reticle is subjected to electrical stress by exposure to an electric field have been investigated by applying voltage directly to the structures in a special test reticle. Surface current was recorded at all levels of stress from 1V to 100V. The current/voltage characteristic was polarity dependent and exhibited increasing non-linearity as the feature spacing was reduced. Atomic Force Microscopy showed that the electrical stress caused EFM (Electric Field induced Migration of chrome), matching the damage seen in reticles stressed through induction by an external electric field. No ESD events were recorded, confirming that EFM is independent of ESD and that it occurs with lower electrical stress. The threshold for EFM was found to be five times lower than the previous estimate, starting at 1V with 1m spacing. Damage caused by EFM was shown to be continuous, cumulative and the rate of CD degradation was measured to be from 3 to 6 nm per second.

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