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Si/Ge elatform for lasers, amplifiers, and nonlinear optical devices based on the Raman Effect
The use of a silicon-germanium platform for the development of optically active devices will be discussed in this paper, from the perspective of Raman and Brillouin scattering phenomena. Silicon-Germa...
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Laser charactersitics and gain properties of the novel Ga(NAsP)/GaP-material system for the integration to Si
The current status of the development of the novel dilute nitride Ga(NAsP)/GaP for the monolithic integration of optoelectronic functionality to Si is summarized from the concept, design and epitaxial...

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Monolithic integrated ring resonator Raman silicon laser and amplifier

Proc. SPIE, Vol. 6485, 648511 (2007); doi:10.1117/12.714210

Online Publication Date: 8 February 2007

Conference Date: Monday 22 January 2007
Conference Location: San Jose, CA, USA
Conference Title: Novel In-Plane Semiconductor Lasers VI
Conference Chairs: Carmen Mermelstein, David P. Bour
Haisheng Rong, Shengbo Xu, Yin-Hao Kuo, and Vanessa Sih
Intel Corp.

Oded Cohen and Omri Raday
Intel Corp. (Israel)

Mario Paniccia
Intel Corp.
We present a chip-scale ring resonator Raman silicon laser and amplifier based on a silicon-on-insulator rib waveguide with an integrated p-i-n diode structure. The laser cavity consists of a race-track shaped ring resonator connected to a straight bus waveguide via a directional coupler which couples both pump and signal laser light into and out of the cavity. The optical propagation loss of the ring resonator is reduced to <0.3 dB/cm on average and the effective free carrier lifetime in the waveguide can be shortened to <1 ns under reverse biasing, which efficiently reduces the nonlinear loss due to two-photon absorption induced free carrier absorption. We achieve continuous-wave, single-mode lasing with threshold of <20 mW and slope efficiency of >23%. Based on the same ring resonator architecture, we build a compact, chip-scale Raman amplifier that takes advantage of the cavity enhancement effect to lower the pump power and reduce the device size. We achieve over 3 dB amplification with 3 times less pump power in a 3 cm ring resonator compared to a straight waveguide of the same length. Our experimental results agree with simulations. The ring resonator based laser and amplifier can be integrated on chip with other silicon photonics components to provide a monolithic integrated photonic device.

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