Achieving conductive high Al-content AlGaN alloys for deep UV photonics
Recent progresses in epitaxial growth and fundamental studies on electrical and optical properties of high Al-content AlGaN alloys with Si, Mg, and Zn doping are presented. For Si doped AlxGa1-xN, the...
Techniques for high quality SiO2 films
We report on the comparison of optical, structural, and electrical properties of SiO2 using plasma-enhanced chemical vapor deposition and ion-beam sputtering deposition. High-quality, low-temperature ...
Proc. SPIE, Vol. 6479, 64791J (2007);
doi:10.1117/12.713774
Online Publication Date: 2 February 2007
Conference Date: Monday 22 January 2007
Conference Location: San Jose, CA, USA
Conference Title: Quantum Sensing and Nanophotonic Devices IV
Conference Chairs: Manijeh Razeghi, Gail J. Brown
Wide bandgap III-Nitride semiconductors area promising material system for the development of ultraviolet avalanchephotodiodes (APDs) that could be a viable alternative to photomultipliertubes. In this paper, we report the epitaxial growth andphysical properties of device quality GaN layers on high qualityAlN templates for the first backilluminated GaN p-i-n APD structureson transparent sapphire substrates. The 25 m x 25 mdevice characteristics were measured, and compared with the same devicesgrown on GaN templates, under low bias and linear modeavalanche operation where they exhibited gains near 1500 after undergoingavalanche breakdown. The breakdown electric field in GaN was determinedto be 2.73 MV/cm. The hole impact ionization coefficients wereshown to be greater than those of electrons. These APDswere also successfully operated under Geiger mode.
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