III-V based THz detectors and plasmon effects
The THz region is of considerable interest with research on both single element detectors and imagers. Results are reported on heterojunction and homojunction detectors using III-V semiconductor mater...
A resonant tunneling CdSe quantum dot photodetector for spectral resolution in the visible region
A spectrally resolving quantum dot photodetector has been designed and fabricated which is able to discriminate wavelengths in the visible region. The device consists of a monolayer of 5.4 nm diameter...
Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes
Proc. SPIE, Vol. 6479, 64790S (2007);
doi:10.1117/12.711588
Online Publication Date: 7 February 2007
Conference Date: Monday 22 January 2007
Conference Location: San Jose, CA, USA
Conference Title: Quantum Sensing and Nanophotonic Devices IV
Conference Chairs: Manijeh Razeghi, Gail J. Brown
Inthis work, an AlSb-containing Type II InAs/GaSb superlattice, the so-calledM-structure, is presented as a candidate for mid and longwavelength infrared detection devices. The effect of inserting an AlSbbarrier in the GaSb layer is discussed and predicts manypromising properties relevant to practical use. A good agreement betweenthe theoretical calculation based on Empirical Tight Binding Method frameworkand experimental results is observed, showing the feasibility of thestructure and its properties. A band gap engineering method withoutmaterial stress constraint is proposed.
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