Colloidal quantum dots as optoelectronic elements
A variety of colloidal semiconductor quantum dots and related quantum-wire structures are characterized using absorption and photoluminescence measurements. The electronic properties of these structu...
InGaAs/InGaP quantum-dot infrared photodetector with a high detectivity
Quantum-dot infrared photodetectors (QDIPs) have recently been considered as strong candidates for numerous applications such as night vision, space communication, gas analysis and medical diagnosis i...
InAs quantum dot infrared photodetectors on InP by MOCVD
Proc. SPIE, Vol. 6127, 61270M (2006);
doi:10.1117/12.659051
Online Publication Date: 28 February 2006
Conference Date: Monday 23 January 2006
Conference Location: San Jose, CA, USA
Conference Title: Quantum Sensing and Nanophotonic Devices III
Conference Chairs: Manijeh Razeghi, Gail J. Brown
Herewe report our recent results of InAs quantum dots grownon InP substrate by low-pressure metalorganic chemical vapor deposition (MOCVD)for the application of quantum dot infrared photodetector (QDIP). Wehave previously demonstrated the first InP-based QDIP with a peakdetection wavelength at 6.4 µm and a detectivity of 1010cmHz1/2/Wat 77K. Here we show our recent work toward shiftingthe detection wavelength to the 3-5 µm middlewavelength infrared (MWIR)range. The dependence of the quantum dot on the growthconditions is studied by atomic force microscopy, photoluminescence and Fouriertransform infrared spectroscopy. The device results from the MWIR InAs/InPQDIPs are discussed. Right now, the performance of the QDIPsis still far below the predicted potential, and one ofthe reasons is the low quantum efficiency. Possible ways toincrease the quantum efficiency of QDIPs are discussed.
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