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Previous Article
Low-loss integrated optical sensors based on hollow-core ARROW waveguide
Here we present an analysis of a fully planar optical sensor based on ARROW waveguides. We consider a device geometry that consists of two intersecting ARROW waveguides, one with solid and one with li...
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Fiber Bragg grating sensor monitoring with thermally tuned Fabry-Perot cavity integrated in an all-silicon rib waveguide
Fiber Bragg Gratings (FBG) sensors are a very promising solution for strain and/or temperature monitoring in hostile or hazardous environments. In particular, their typical immunity to EMI and the abs...

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Integrated planar lightwave bio/chem OEIC sensors on Si CMOS circuits

Proc. SPIE, Vol. 5730, 226 (2005); doi:10.1117/12.592771

Online Publication Date: 14 March 2005

Conference Date: Tuesday 25 January 2005
Conference Location: San Jose, CA, USA
Conference Title: Optoelectronic Integration on Silicon II
Conference Chairs: Joel A. Kubby, Ghassan E. Jabbour
Nan M. Jokerst, Martin A. Brooke, and Sang-Yeon Cho
Duke Univ. (USA)

Mikkel Thomas and Jeffrey Lillie
Georgia Institute of Technology (USA)

Daeik Kim
Duke Univ. (USA)

Stephen Ralph, Karla Dennis, Benita Comeau, and Cliff Henderson
Georgia Institute of Technology (USA)
Optical sensing, and the integration of sensors and electronics into Sensor on a Chip and Sensor on a Package systems are an approach to the creation of miniaturized, portable, customizable, low cost sensor systems for rapid health diagnostics, medical research, environmental monitoring, and security monitoring. To integrate optical sensing systems that are autonomous, it is essential to integrate the sensor, light source, and light detection into a single substrate or chip. The integration of this optical system with signal control and processing electronics enable discrimination with individually customized sensors in sensor arrays, and high sensitivity levels. Thin film optoelectronic active device integration with planar optical passive devices is a heterogeneous integration method for fabricating planar lightwave integrated circuits at the chip level and planar lightwave integrated systems at the substrate and package level.

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