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Previous Article
IR ellipsometric studies of Ti and Mo surfaces modified by high-dose ion irradiation
The effects of high-dose metal ion implantation on optical properties of metal mirrors have been analyzed by means of the IR Fourier transform spectral ellipsometry in the wavelength range 2 - 25 micr...
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Effect of irradiation on quantum-size layer properties grown on semi-insulating GaAs
The effect of electron (E = 1.8 MeV), -(60Co) and X-ray irradiation on the structural and optical properties of a (Ga,Al)As and a (Zn,Cd)Te quantum wells (QWs) grown on semi-insulating (SI) GaAs is st...

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Electromagnetic wave reflection by rough fractal surface of semiconductor materials

Proc. SPIE, Vol. 5024, 90 (2003); doi:10.1117/12.497262

Online Publication Date: 18 September 2003

Conference Title: Selected Papers on Optics and Photonics: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Conference Chairs: Sergey V. Svechnikov, Mikhail Y. Valakh
Leonid G. Grechko, Olexander Y. Semchuk, Victor V. Gozhenko, and Anatolii A. Pinchuk
Institute of Surface Chemistry (Ukraine)
In the given work the rough surface of semiconductor is modeling by 2D fractal Wierstrass function. On the basis of the Kirchhoff scalar theory the scattering indicatrices for the some types od scattering surfaces are present. On the basis of numerical accounts average scattering coefficient the diagrams of dependence for various fractal semiconductor surfaces was constructed.

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